The P-channel refractory metal self-registered MOSFET

Abstract

In this paper p-channel self-registered Mo gate MOSFET fabrication techniques are described and tested. Excellent p-channel devices resulted. Device characteristics including junction characteristics, threshold, stability, effective channel mobilities, and Si-SiO2interface studies are examined and compared with theoretical predictions. Simple processing steps yielded FETs whose threshold is predictably controlled by the intrinsic properties of Mo and the Si-SiO2system. Effective mobility theory matches the data at low fields, but at high fields theory predicts values that are too low. Similarly constructed integrated circuits are T2L compatible with excellent threshold reproducibility and exhibit stability during accelerated temperature-bias life testing.