Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth
- 27 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (4), 290-292
- https://doi.org/10.1063/1.96583
Abstract
Photoluminescence (PL) studies have been carried out on 120 Å InGaAs/InAlAs single quantum well structures grown by molecular beam epitaxy. Three types of samples were grown with the growth being interrupted before interface formation. The interruption times were 0, 2, and 3 min. The corresponding linewidth of the main excitonic transition associated with the quantum well was found to be 20, 16, and 10 meV, respectively, while the PL intensity changed by the ratio 1:0.4:0.1. We believe this behavior is due to a steady improvement in the interface quality due to interruption accompanied by impurity accumulation during the interruption. Analysis of the 10 meV linewidth, which is among the smallest ever reported, suggests that the InAlAs/InGaAs interface can be described by two-dimensional InAlAs and InGaAs islands which have a height of two monolayers and a lateral extent of about 100 Å.Keywords
This publication has 9 references indexed in Scilit:
- Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-AlxGa1−xAs single quantum wellsJournal of Applied Physics, 1985
- Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high-resolution photoluminescence spectroscopyJournal of Vacuum Science & Technology B, 1985
- Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wellsJournal of Vacuum Science & Technology B, 1985
- Role of interface roughness and alloy disorder in photoluminescence in quantum-well structuresJournal of Applied Physics, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wellsApplied Physics Letters, 1985
- Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984
- Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structuresPhysical Review B, 1984
- Optical properties of GaInAs/AlInAs single quantum wellsApplied Physics Letters, 1983