Design and Performance of Microwave Amplifiers with GaAs Schottky-Gate Field-Effect Transistors
- 1 May 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 22 (5), 510-517
- https://doi.org/10.1109/tmtt.1974.1128271
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Design and Performance of Microwave Amplifiers with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1974
- Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistorsElectronics Letters, 1973
- X- and Ku-band amplifiers with GaAs Schottky-barriers field-effect transistorsIEEE Journal of Solid-State Circuits, 1973
- Fast neutron tolerance of GaAs JFET's operating in the hot electron rangeIEEE Transactions on Electron Devices, 1972
- X- and Ku-band amplifiers with GaAs Schottky-barrier FETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Single and Dual Gate GaAs FET Integrated Amplifiers in C BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Design Considerations of a 3.1 - 3.5 GHz GaAs FET Feedback AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Q band GaAs f.e.t. amplifier and oscillatorElectronics Letters, 1971
- C-band FET amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- Available Power Gain, Noise Figure, and Noise Measure of Two-Ports and Their Graphical RepresentationsIEEE Transactions on Circuit Theory, 1966