Near-room-temperature mid-infrared interband cascade laser
- 11 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (19), 2370-2372
- https://doi.org/10.1063/1.121359
Abstract
A 25-stage interband cascade laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing in pulsed mode up to 286 K. A peak output power of 160 mW/facet and a slope efficiency of 197 mW/A per facet (1.1 photons per injected electron) were measured at 196 K. Above 200 K, the characteristic temperature was higher (T0=53 K) and the threshold current densities lower than for a previously reported W interband cascade laser without the third hole quantum well.Keywords
This publication has 16 references indexed in Scilit:
- Low threshold 3 μm interband cascade “W” laserJournal of Electronic Materials, 1998
- Interband cascade laser emitting >1 photon per injected electronIEEE Photonics Technology Letters, 1997
- High power mid-infrared interband cascade lasers based on type-II quantum wellsApplied Physics Letters, 1997
- High-power/low-threshold type-II interband cascade mid-IR laser-design and modelingIEEE Photonics Technology Letters, 1997
- Type-II interband quantum cascade laser at 3.8 [micro sign]mElectronics Letters, 1997
- Recent advances in Sb-based midwave-infrared lasersIEEE Journal of Quantum Electronics, 1997
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Type-II and type-I interband cascade lasersElectronics Letters, 1996
- Infrared laser based on intersubband transitions in quantum wellsSuperlattices and Microstructures, 1995
- Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layersApplied Physics Letters, 1994