Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering

Abstract

Heteroepitaxial films of InSb have been deposited by metalorganic magnetron sputtering (MOMS) on 〈100〉 silicon substrates using molecular beam epitaxy (MBE) GaAs buffer layers. X-ray diffraction and cross-sectional transmission electron microscopy measurements indicate the epilayers to be structurally similar to layers deposited by MOMS and MBE on high quality GaAs substrates, despite the increased defect density of the GaAs buffer layer. Some of the defects within the buffer layer propagate into the InSb epilayer; however, the majority of defects arise from the lattice mismatch at the interfacial region.