The growth and annealing of single crystalline ZnO films by low-pressure MOCVD
- 12 June 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 243 (1), 151-156
- https://doi.org/10.1016/s0022-0248(02)01474-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Donor–acceptor pair transitions in ZnO substrate materialPhysica B: Condensed Matter, 2001
- Excitonic gain and stimulated ultraviolet emission in nanocrystalline zinc-oxide powderApplied Physics Letters, 2000
- p-Type Electrical Conduction in ZnO Thin Films by Ga and N CodopingJapanese Journal of Applied Physics, 1999
- Highly oriented ZnO thin films deposited on Ru/Si substratesThin Solid Films, 1999
- ZnO broadens the spectrumIII-Vs Review, 1999
- Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin filmsMaterials Science and Engineering B, 1998
- Preparation and some properties of nitrogen-mixed ZnO thin filmsThin Solid Films, 1996
- Control of preferred orientation for ZnO films: control of self-textureJournal of Crystal Growth, 1993
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984
- Variation ofc-Axis Orientation of ZnO Thin Films Deposited by DC Diode SputteringJapanese Journal of Applied Physics, 1973