Abstract
A large photocapacitance is observed in CdS/CdTe thin-film solar cells. A Schottky-barrier solar cell containing deep levels within the bulk was considered, and the dependence of photocapacitance on defect energy level, capture cross section, defect concentration, and light intensity was calculated. Predictions of the model with parameters appropriate for the CdS/CdTe solar cell and information on deep levels obtained from DLTS agreed with experiment.