Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack
- 1 April 2013
- journal article
- Published by Elsevier BV in Journal of Rare Earths
- Vol. 31 (4), 395-399
- https://doi.org/10.1016/s1002-0721(12)60293-2
Abstract
No abstract availableKeywords
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