FIELD-ENHANCED PHOTOEMISSION FROM LARGE-AREA Ge DIODES AT LOW TEMPERATURES

Abstract

Experimental observations on FEPE from large‐area Ge diodes at low temperatures (∼90°K) are reported. These data include values of the device quantum efficiency as a function of wavelength and bias. An effect is reported in which photon‐induced changes in emissive current are observed at wavelengths up to 2 μ, i.e. well beyond the absorption edge, with efficiencies 4 × 10⁻⁵. Aging characteristics associated with this long wavelength effect are described. A tentative suggestion is made that the effect is due to photon‐induced changes in the surface field leading to changes in field emission.