Lead-tin telluride photodiode arrays for detection in the 8–14 μm band

Abstract

This paper describes the lead-tin telluride system and its application to the fabrication of fast sensitive infra-red detectors both as single elements and arrays. The electrical and optical properties are discussed with emphasis on the sensitivity of the single elements, and the uniformity in both spectral response and sensitivity for the arrays. (12.1 μm, 800, 1) values up to 2.9 × 1010 cm Hz½ watt−1 have been achieved for unbiased single detectors and 14×1 element arrays have been measured with a spread in D*λ values as good as 2.2 : 1.