A systematic study of positron lifetimes in semiconductors
- 30 January 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (3), 599-605
- https://doi.org/10.1088/0022-3719/15/3/024
Abstract
Positron lifetimes for the ten semiconductors Si, Ge, alpha -Sn, GaP, GaAs, GaSb, InP, InAs, InSb, and CdTe as well as for diamond and SiC have been measured. The bulk-annihilation rates range from 8.7 ns-1 for diamond to 3.44 ns-1 for CdTe and agree well with theoretical calculations. The effect of doping of GaAs was investigated with four different concentrations of Si and of Cd and Cr. In contrast to Si, significant doping effects are present in GaAs.Keywords
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