Effect of cooling ambient on electrical activation of dopants in MOVPE of InP

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Abstract
The electrical doping level of p-InP (Zn or Cd) cooled from typical MOVPE growth temperatures is strongly dependent on the gaseous cooling ambient. This is the result of electrical deactivation rather than loss of the dopant. Atomic H is found in samples cooled in AsH3 or PH3 and the possibility of an H passivation mechanism is discussed.