Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
- 7 August 2000
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 77 (1), 50-54
- https://doi.org/10.1016/s0921-5107(00)00464-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopyphysica status solidi (a), 1997
- Measurement of electrophysical properties of silicon carbide epitaxial filmsDiamond and Related Materials, 1994
- Site-competition epitaxy for superior silicon carbide electronicsApplied Physics Letters, 1994
- Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open systemMaterials Science and Engineering B, 1992
- Photoluminescence Due to Al, Ga, and B Acceptors in 4H‐, 6H‐, and 3 C ‐ SiC Grown from a Si MeltJournal of the Electrochemical Society, 1977