Effect of substrate temperature and depostion profile on evaporated Cu(InGa)Se 2 films and devices
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 361-362, 473-477
- https://doi.org/10.1016/s0040-6090(99)00844-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gapJournal of Applied Physics, 1996
- A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporationAdvanced Materials, 1993