High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 42 (12), 2590-2597
- https://doi.org/10.1109/22.339801
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- An ultra low noise W-band monolithic three-stage amplifier using 0.1- mu m pseudomorphic InGaAs/GaAs HEMT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MM-wave MIMIC receiver componentsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic GaAs W-band pseudomorphic MODFET amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Room temperature photoluminescence from modulation doped AlGaAs/InGaAs/GaAs quantum wellsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETsIEEE Transactions on Microwave Theory and Techniques, 1993
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- Determination of electrical transport properties using a novel magnetic field-dependent Hall techniqueJournal of Applied Physics, 1987