Structure and electrical characteristics of silicon field emission microelectronic devices
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (10), 2309-2313
- https://doi.org/10.1109/16.88515
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A progress report on the Livermore Miniature Vacuum Tube ProjectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Fabrication of silicon field emission points for vacuum microelectronics by wet chemical etchingSemiconductor Science and Technology, 1991
- Formation of silicon tips with <1 nm radiusApplied Physics Letters, 1990
- Modeling and fabricating micro-cavity integrated vacuum tubesIEEE Transactions on Electron Devices, 1989