Theory of electrical rectification in a molecular monolayer
- 2 August 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (8), 085405
- https://doi.org/10.1103/physrevb.64.085405
Abstract
The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mechanism, but also on the profile of the electrostatic potential which is extremely sensitive to where the electroactive part of the molecule lies in the monolayer. This second effect can produce rectification in the direction opposite to the Aviram-Ratner prediction.
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This publication has 25 references indexed in Scilit:
- Molecular Wire Electronic State Crossing Driven by Applied VoltageThe Journal of Physical Chemistry B, 2000
- All about (N-hexadecylquinolin-4-ium-1-yl)methylidenetricyanoquinodimethanide, a unimolecular rectifier of electrical currentJournal of Materials Chemistry, 2000
- Rectification between 370 and 105 K in Hexadecylquinolinium TricyanoquinodimethanideThe Journal of Physical Chemistry B, 1999
- Electron Transfer through a Monolayer of Hexadecylquinolinium TricyanoquinodimethanideLangmuir, 1999
- The unimolecular rectifier: unimolecular electronic devices are coming …Journal of Materials Chemistry, 1999
- Molecular rectification with M|(D-σ-A LB film)|M junctionsJournal of Materials Chemistry, 1999
- Asymmetric I/V Characteristics in Nonalternant Carbon NetworksThe Journal of Physical Chemistry B, 1998
- Unimolecular Electrical Rectification in Hexadecylquinolinium TricyanoquinodimethanideJournal of the American Chemical Society, 1997
- Schottky barrier formation. I. Abrupt metal-semiconductor junctionsJournal of Physics C: Solid State Physics, 1983
- Self-consistent procedure for point defects in tight-binding systems: Application to semiconductorsPhysical Review B, 1974