A subnanosecond switching circuit
- 1 January 1974
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A process, including the use of electron and ion beams, has made it possible to develop very fast and low-power switching circuits. Active transistors are one micron-gate silicon Schottky-barrier FETs.Keywords
This publication has 1 reference indexed in Scilit:
- Estimate of substrate influence on space-charge-limited currentElectronics Letters, 1973