An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor

Abstract

An analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET has been developed. This model uses a Trofimenkoff-type relation [1] for the electron velocity and electrical field and assumes that the electron velocity saturation inside the two-dimensional electron gas channel cause current saturation. It also takes into account the parasitic conduction in the AlGaAs layer by including a MESFET operation. Based on this model, analytical current-voltage equations suitable for computer simulation have been derived. Calculated results for sub-half-micrometer HEMT's show excellent agreement with measured characteristics.