Single-heterostructure PbS(1−x)Sex diode lasers
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11), 5069-5071
- https://doi.org/10.1063/1.1663185
Abstract
PbS(1−x)Sex single‐heterostructure diode lasers have been fabricated using a 300 °C vacuum deposition process to grow layers of p‐ or n‐PbS0.72Se0.28 onto n‐PbS0.78Se0.22 bulk substrates. At 12 K, laser emission occurs at 4.98 μm in the grown PbS0.72Se0.28 layer. Maximum power outputs are on the order of 1 mW. The 0.20% lattice mismatch at the heterojunction does not impose serious limitations on laser performance.Keywords
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