Time Resolved Spectra of Raman and Thermal Emission During Pulsed Laser Heating of Silicon
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Comment on ‘‘Raman scattering with nanosecond resolution during pulsed laser annealing of silicon’’ [Appl. Phys. Lett. 4 1, 700 (1982)]Applied Physics Letters, 1983
- Raman scattering with nanosecond resolution during pulsed laser annealing of siliconApplied Physics Letters, 1982
- Time-reversal invariance and Raman measurements of phonon populations under nonequilibrium conditionsPhysical Review B, 1982
- Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulsesJournal of Applied Physics, 1982
- Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of SiliconMRS Proceedings, 1982
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Temperature Dependence of Raman Scattering in SiliconPhysical Review B, 1970