Effect of oxygen in diamond deposition at low substrate temperatures
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5), 437-439
- https://doi.org/10.1063/1.102758
Abstract
Thin diamond films were deposited on different substrates at temperatures below 500 °C by a microwave plasma‐enhanced chemical vapor deposition system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The addition of oxygen to the gas mixtures was found to be critical for diamond growth at low temperatures. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transparency. The diamond films were also characterized by scanning electron microscopy.Keywords
This publication has 8 references indexed in Scilit:
- Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor depositionApplied Physics Letters, 1989
- Effect of mixing oxygen or diborane on the formation of amorphous carbon films from methane by r.f. plasma chemical vapour depositionThin Solid Films, 1988
- Crystallization of diamond crystals and films by microwave assisted CVD (Part II)Materials Research Bulletin, 1988
- Diamond synthesis from methane-hydrogen-water mixed gas using a microwave plasmaJournal of Materials Science, 1988
- Effects of Oxygen on CVD Diamond SynthesisJapanese Journal of Applied Physics, 1987
- Synthesis of Diamond Thin Films by Thermal CVD Using Organic CompoundsJapanese Journal of Applied Physics, 1986
- Influence of RF Power on Properties of a-Si1-xGex:H Prepared by RF Glow Discharge DecompositionJapanese Journal of Applied Physics, 1986
- Growth of diamond at room temperature by an ion-beam sputter deposition under hydrogen-ion bombardmentJournal of Applied Physics, 1985