Demonstration of motor drive with SiC normally-off IBMOSFET/SBD power converter
- 1 May 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Normally-off power MOSFET with low R ons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low R ons of 1.8mΩcm 2 with a blocking voltage of 660V. The effective channel mobility of this device is 90 cm 2 /Vs which corresponds to the channel resistance of 0.8mΩcm 2 . A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400 W DC motor drive was successfully observed at room temperature.Keywords
This publication has 4 references indexed in Scilit:
- Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature AnnealingPublished by Test accounts ,2007
- Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- High-Current, NO-Annealed Lateral 4H-SiC MOSFETsMaterials Science Forum, 2002
- Counter-doped MOSFETs of 4H-SiCIEEE Electron Device Letters, 1999