Plasma etching of PLZT: Review and future prospects

Abstract

Future application of ferroelectric thin films in high density integrated electronic and optical circuits will require the development of suitable plasma etching techniques. Although plasma etching is a well developed technology for semiconductors, its application to PLZT thin films is complicated by several factors. In this paper, the prospects for applying plasma etching to PLZT and other perovskite ceramics, will be discussed. This begins with an overview of plasma etching techniques, including a discussion of the applicability of each technique to ceramic thin films. A summary of current plasma etching results for PLZT is presented, which includes a discussion of etch rates, stoichiometry changes, anisotropy, and selectivity that have been observed. Some suggestions for future research required in order for integrated ceramic thin films to be fully realized are presented.