A numerical analysis of Auger processes in p-type GaAs

Abstract

We calculate the contributions of pure collision and phonon‐assisted Auger processes within the framework of the Kane model to the nonradiative lifetime of p‐doped GaAs. Our approach employs refined expressions for the wavefunction overlap integrals. Further, in contrast to previous treatments, our theory correctly describes the temperature dependence of the optical phonon‐assisted Auger processes. Our values for the Auger lifetimes are in good agreement with experimental results.