Calculation of localized-state energy distributions from transient-photoresponse data
- 1 November 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 56 (5), 641-652
- https://doi.org/10.1080/13642818708220169
Abstract
Time-of-flight studies of carrier transport through films of an amorphous semiconductor may be used to explore the energy distribution of shallow localized states in such materials. In this paper, we describe a new and computationally straightforward procedure for this purpose. The effectiveness of both this and previous techniques is evaluated using computer-generated time-of-flight data for model semiconductor films having known energy distributions of localized states. The procedures are also assessed in relation to recent experimental data for electron transport in amorphous silicon.Keywords
This publication has 9 references indexed in Scilit:
- Extended-state mobility and its relation to the tail-state distribution ina-Si:HPhysical Review B, 1986
- Electron drift mobility in amorphous Si: HPhilosophical Magazine Part B, 1986
- Comments on the calculation of the extended state electron mobility in amorphous siliconSolid State Communications, 1985
- The study of transport and related properties of amorphous silicon by transient experimentsJournal of Non-Crystalline Solids, 1983
- Transient photoconductivity and thermalization in amorphous semiconductorsPhilosophical Magazine Part B, 1983
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Hole carrier transport in amorphous silicon filmsPhilosophical Magazine Part B, 1979
- A trap-limited model for dispersive transport in semiconductorsPhilosophical Magazine, 1977
- Theory of trap-controlled transient photoconductionPhysical Review B, 1977