Intrinsic carrier concentration of Hg1−xCdxTe
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (12), 8107-8111
- https://doi.org/10.1063/1.325950
Abstract
The intrinsic carrier concentration ni is measured for Hg1−xCdxTe with 0.205⩽x⩽0.22 and x=0.29 and 150<Tni=[1.265×1016T3/2(6+x)−3/2 E3/2G]{1+[1+22.72(6+x)3/2E−3/2G exp(EG/KT)]1/2}−1 (cm−3), where the band gap EG is given by EG(eV) =6.006×10−4T (1−1.89x)+1.948x−0.337.Keywords
This publication has 6 references indexed in Scilit:
- Anodic Oxide Films on Hg1 − x Cd x TeJournal of the Electrochemical Society, 1979
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Carrier concentration of Hg1−xCdxTeJournal of Applied Physics, 1974
- Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p CalculationsJournal of Applied Physics, 1970
- Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTeJournal of Applied Physics, 1969