Current-Voltage Characteristics, Small-Signal Parameters, Switching Times and Power-Delay Products of GaAs MESFET's
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 78, 150-152
- https://doi.org/10.1109/mwsym.1978.1123819
Abstract
New simple computer and analytical models of GaAs MESFET's are proposed. The models are based on the assumption that the current saturation in GaAs MESFETs is related to the stationary Gunn domain formation at the drain side of the gate rather than to a pinch-off of the conducting channel under the gate. The results of the calculation are in good agreement with experimental data. The models can be used for a computer-aided design of GaAs integrated circuits.Keywords
This publication has 2 references indexed in Scilit:
- Drain conductance of junction gate FET's in the hot electron rangeIEEE Transactions on Electron Devices, 1976
- Analytical theory of stable domains in high-doped Gunn diodesElectronics Letters, 1970