Quantum transport in silicon inversion layers
- 25 June 2007
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperaturesJournal of Physics C: Solid State Physics, 1974
- Oscillatory Magnetoconductance of-Type Inversion Layers in Si SurfacesPhysical Review Letters, 1974
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955