CuxS-CdS Junction Cell for the C-Plane of the CdS Single Crystal

Abstract

The p-layers (Cu _x S) are made by the chemical deposit method on the Cd-plane and S-plane, [E. P. Ware Kois et al: J. appl. Phys. 33 (1962) 690] respectively, for the C-planes of CdS single crystals. The concentration ratio of Cu, S and Cd atoms near the boundary are determined by an electron probe X-ray micro analyzer. The energy band model of the junction cell is proposed on the basis of measurements of voltage-current, voltage-capacitance characteristics and photovoltaic effect. From the results obtained, the junction between the p-layer on the Cd-plane and the CdS crystal forms a graded junction; on the other hand, the junction on the S-plane forms an abrupt junction. The formation of the p-layer does not depend on Cu thermal diffusion, [R. L. Clarke: J. appl. Phys. 30 (1959) 957] but on dissolution of Cd ions and deposition of Cu ions.