Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Top Cited Papers
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (7), 341-343
- https://doi.org/10.1109/55.847374
Abstract
Electrical and reliability properties of ultrathin La/sub 2/O/sub 3/ gate dielectric have been investigated. The measured capacitance of 33 /spl Aring/ La/sub 2/O/sub 3/ gate dielectric is 7.2 /spl mu/F/cm/sup 2/ that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl Aring/. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm/sup 2/ at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO/sub 2/.Keywords
This publication has 4 references indexed in Scilit:
- Quantum effect in oxide thickness determination from capacitance measurementPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentIEEE Electron Device Letters, 1999
- Thin oxides with in situ native oxide removal [n-MOSFETs]IEEE Electron Device Letters, 1997
- Self-consistent modeling of accumulation layers and tunneling currents through very thin oxidesApplied Physics Letters, 1996