Microwave Conductivity of Silicon and Germanium

Abstract

This paper presents measurements of the complex microwave conductivity of lightly‐doped n‐ and p‐type silicon and genmanium as functions of impurity concentration and of temperature between 77° and 300°K. The measurements were obtained by observing the reflectivity of the circular T E₀₁ mode at 48 GHz and are thus free of errors caused by the impedance of the waveguide‐sample contact. Analysis utilized currently accepted scattering models including ionized impurity scattering, intravalley acoustic and optical mode scattering, and intervalley scattering. The results are used to investigate the temperature and doping dependence of the average relaxation time and the conductivity ``effective'' mass.