Quenched Imperfections and the Electrical Resistivity of Aluminum at Low Temperatures

Abstract

The electrical resistivity of a high-purity aluminum specimen, having different concentrations of "quenched-in" lattice defects, is reported for the temperature region 1-20°K. For small and different concentrations of structural impurities, the resistivity follows Matthiessen's rule. The exponential constant, $n$, in the equation, $\rho ={\rho }_i+A{T}^n$, is equal to 2.7 for the sample in a well-annealed state. This number increases slightly with an in crease in defect concentration.