Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

Abstract

The literature on the chemical composition and growth of thermal and anodic oxides of the Ga and In III–V compounds is reviewed and discussed. Emphasis is placed on the questions ’’what is the chemical composition of the oxide/III–V interface’’ and ’’how and why did it get that way’’. It is apparent that much is known about these interfaces but knowledge of a number of important growth, thermodynamic, and structural parameters is lacking.