Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields
- 1 November 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (6), 1065-1082
- https://doi.org/10.1007/bf02658917
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- High-speed photoconductive detectors using GaInAsIEEE Journal of Quantum Electronics, 1981
- Temperature dependence of the transferred electron threshold current in In1−xGaxAsyP1−yElectronics Letters, 1981
- Failure of Matthiessen's rule in the calculation of carrier mobility and alloy scattering effects in Ga0.47In0.53AsElectronics Letters, 1981
- In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunnelingApplied Physics Letters, 1980
- Calculations of the intrinsically higher temperature stability of electronic devices made from quaternary alloysElectronics Letters, 1980
- Evidence for alloy scattering from pressure-induced changes of electron mobility in In1−xGaxAsyP1−yElectronics Letters, 1980
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Electron drift velocity in n-GaAs at high electric fieldsSolid-State Electronics, 1977
- Drift mobility measurements in thin epitaxial semiconductor layers using time-of-flight techniquesSolid-State Electronics, 1974
- New time-of-flight technique for measuring drift velocity in semiconductorsElectronics Letters, 1972