30° Partial Dislocations in Silicon: Absence of Electrically Active States

Abstract

Partial dislocations are the most important intrinsic defects, other than point defects, in controlling the mechanical and electronic properties of silicon. From high-resolution electron-microscopy data, and a simple optimization procedure, a realistic geometry is presented for the 30° partial dislocation. Electronic structure calculations have been performed for this geometry and it has been established that no electrically active states are associated with this dislocation.