Hydrogen termination for extended queue times for low temperature epitaxy
- 17 June 2008
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 255 (5), 1741-1743
- https://doi.org/10.1016/j.apsusc.2008.06.025
Abstract
No abstract availableKeywords
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- Control factor of native oxide growth on silicon in air or in ultrapure waterApplied Physics Letters, 1989