Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs
- 1 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1), 156-160
- https://doi.org/10.1063/1.343896
Abstract
Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz–Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3 μm thick, a photoreflectance signal at the band edge contains a substrate-epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.Keywords
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