One-dimensional lateral-field-effect transistor with trench gate-channel insulation
- 17 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25), 2695-2697
- https://doi.org/10.1063/1.103803
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsApplied Physics Letters, 1990
- Preparation of one-dimensional single and multi-layered quantum wire structures by ultrafine deep mesa etching techniquesMicroelectronic Engineering, 1989
- One-dimensional electronic systems in ultrafine mesa-etched single and multiple quantum well wiresApplied Physics Letters, 1988
- Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfacesApplied Physics Letters, 1984