High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (11), 1316-1318
- https://doi.org/10.1109/68.250055
Abstract
Monolithic photoreceivers, using the base-collector junction of an InP/InGaAs phototransistor structure for a p-i-n photodetector, have been fabricated for the first time. Bandwidths as high as 3 GHz and bit rates as high as 5 Gb/s, with sensitivities of -22.5 dBm and -21.5 dBm for light focused on the p-i-n or on the first stage transistor of the preamplifier, respectively, have been achieved. These results represent the highest operating speed demonstrated for any phototransistor-based receiver.<>Keywords
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