Isotopically enriched designer-diamond anvil

Abstract

Isotopically enriched (42 at. % ${}^{13}\mathrm{C})$ designer-diamond anvils were grown by microwave plasma chemical vapor deposition using methane/hydrogen/oxygen chemistry. These isotopically enriched diamond layers can modify the thermal properties of the culet of high-pressure anvils and also allow the use of a ${}^{13}\mathrm{C}{/}^{12}\mathrm{C}$ Raman pressure sensor system for high-pressure, high-temperature measurements. Raman spectroscopy clearly revealed the isotopically mixed nature of the culet while the photoluminescence spectra at 80 K demonstrate the nitrogen-based defect center near the culet of the diamond anvil. The ability to isotopically modify the diamond culets offers yet another functionality for the embedded electric and magnetic sensors in a designer-diamond anvil.