An InGaAs photodetector for detection in the 1.0–1.5μm wavelength range has been integrated at the end of and above a ridge waveguide in InP. The waveguides were in n−-InP/n+-InP and had an average propagation loss of 3dB/cm at 1.15μm. The reflection losses were 3dB and the coupling loss was 2dB. The photodetector was an InGaAs photoconductor lattice-matched to InP and exhibited a bias-dependent optical gain of up to 2.5 with a unity-gain quantum efficiency of 49% at 1.15μm. 25% of the guided light was absorbed by the photoconductor. The speed of the photoconductor was found to be bias-dependent, varying from 10 ns to 150 ns rise/fall times.