On precipitation of phosphorous in ion implanted silicon
- 1 June 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 14 (3-4), 267-270
- https://doi.org/10.1080/00337577208231211
Abstract
Electron microscope observations on phosphorous ion implanted p−silicon after annealing at 800°C are reported. Heating for ½ hour after implantation of 2 × 1014 ions/cm2 at 20°C was found to produce dislocation loops and rod-like defects similar to those observed in boron implanted silicon. It was concluded that the rod-shaped defects are associated with phorphorous precipitation.Keywords
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