Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
- 1 November 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (11), 1559-1565
- https://doi.org/10.1016/0038-1101(96)00071-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- CoSi2 ohmic contacts to n-type 6HSiCSolid-State Electronics, 1995
- Ohmic contacts to p-type 6H-silicon carbideApplied Surface Science, 1995
- Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)Journal of Materials Research, 1995
- Cobalt disilicide (CoSi2) Schottky contacts to 6H-SICPhysica Scripta, 1994
- Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbideApplied Surface Science, 1993
- Contact resistance measurements on p-type 6H-SiCApplied Physics Letters, 1993
- Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformityIEEE Transactions on Electron Devices, 1983
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971