High-temperature scanning cw laser-induced diffusion of arsenic and phosphorus in silicon
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 821-824
- https://doi.org/10.1063/1.92093
Abstract
The diffusion of arsenic and phosphorus in silicon at temperatures near the melting point has been investigated by using a scanned cw laser. The intrinsic diffusion coefficients of arsenic and phosphorus obtained in this work agree well with the extrapolated values of intrinsic diffusion coefficients reported by others. Diffusion coefficients of arsenic under extrinsic conditions at temperatures over 1200 °C are found to depend linearly on the electron concentration. The validity of the analytical model for solid‐phase reaction expressed in terms of an effective temperature and an effective time for the laser heat source is shown.Keywords
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