Etch Patterns and Ferroelectric Domains in BaTiSingle Crystals
- 15 April 1955
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 98 (2), 409-413
- https://doi.org/10.1103/physrev.98.409
Abstract
It has been found that ferroelectric BaTi single crystals show a differential etch rate when etched in hydrochloric acid. The positive end of the electric polarization etches much faster than the negative one. Thus this phenomenon affords a valuable new tool for the investigation of the ferroelectric domains in BaTi. Some interesting pictures of domain arrangements are shown and discussed. The results obtained demonstrate the extremely strong electric dipole-dipole coupling in the forward direction and the weak coupling in the directions perpendicular to it. This electrostatic interaction governs the domain patterns in ferroelectric BaTi crystals.
Keywords
This publication has 2 references indexed in Scilit:
- Domain Formation and Domain Wall Motions in Ferroelectric BaTiSingle CrystalsPhysical Review B, 1954
- Magnetic Domain Patterns on Single Crystals of Silicon IronPhysical Review B, 1949