Small signal modulation of DH laser diodes: Effect of the junction capacitance
- 31 May 1980
- journal article
- Published by Elsevier in Optics Communications
- Vol. 33 (2), 188-192
- https://doi.org/10.1016/0030-4018(80)90190-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga1-xAlxAs DH LasersJapanese Journal of Applied Physics, 1979
- Buried-Heterostructure Laser Packaging for Wideband Optical Transmission SystemsIEEE Transactions on Communications, 1978
- Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laserApplied Optics, 1978
- Theoretical analysis of spectral modulation behaviour of semiconductor injection lasersOptical and Quantum Electronics, 1978
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Multimode rate equation description of homogeneous spectral broadening in semiconductor lasersElectronics Letters, 1978
- Sinusoidal modulation of a CW GaAs laser from 9 MHz to 1.1 GHzOptics Communications, 1976
- Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1976
- Current dependence of spontaneous carrier lifetimes in GaAs–Ga1-xAlx As double-heterostructure lasersApplied Physics Letters, 1974
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973