Properties of metal/poly(N-methylpyrrole) Schottky barriers

Abstract

Barrier properties of a promising conjugated polymer, poly(N-methylpyrrole) (PMPY) with high- and low-work-function metals, gold and indium respectively, have been investigated. The electrical conductivity of PMPY films was varied from insulating to metallic levels by electrochemical oxidation I-V characteristics were used to investigate the function properties. Heavily doped PMPY⁺ films were found to form an Ohmic contact with gold ( phi _Au=5.1 eV) and a Schottky barrier with indium ( phi _In=4.1 eV), this difference corresponding to the difference in work functions. Results indicate a leaky Schottky barrier with high fields producing InJ varies as V^1/2 and are interpreted in terms of metal-semiconductor band theory.