Transport of excess charge in electron-irradiated dielectrics

Abstract

Irradiation of dielectrics with nonpenetrating electron beams has been used for practical purposes, e.g., manufacturing of electrets, and as a research tool, e.g., the investigation of induced conductivity and transport properties. The present paper develops some aspects of the theory of charge transport and storage and radiation‐induced conductivity in irradiated dielectrics. It is assumed that the dielectric is kept in short circuit and that the range of the incident electron beam is smaller than half the sample thickness. The treatment applies only to dielectrics which have a very low dark conductivity and contain a great number of deep traps.