LONG-WAVELENGTH THRESHOLD OF Cs2O-COATED PHOTOEMITTERS

Abstract

While Cs₂O‐coated III‐V semiconductors can have Kelvin work functions as low as 0.7 eV, the long‐wavelength threshold for efficient photoemission is determined by a significantly higher barrier at the heterojunction between the Cs₂O and the semiconductor. This barrier is 1.23±0.03 eV for Cs₂O on GaSb. For Cs₂O on silver, the barrier height is 1.0 eV.